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Spin-charge conversion in InSe bilayers
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DOI：10.1103/PhysRevB.99.155402.png)
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Abstract
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We find that the bilayer InSe possesses an intrinsic Rashba spin-orbit coupling and hence a spin-charge conversion effect due to the breaking of mirror symmetry. The interplay between the Rashba spin-orbit coupling and the nonparabolic Mexican hat dispersion leads to an interesting intraband Lifshitz transition and strongly amplifies the spin-charge conductivity, making it larger than that in conventional two-dimensional electron gas formed at oxide interfaces. This highlights bilayer InSe as a strong candidate for next-generation spintronic devices.
Keywords:
INDIUM SELENIDE
BAND-STRUCTURE
CONDUCTION
EFFICIENT
ELECTRONS
MOBILITY
GAN
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