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Spin-orbit-torque engineering via oxygen manipulation
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DOI：10.1038/NNANO.2015.18.png)
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Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques, which are a more powerful tool for controlling magnetization and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin-orbit-torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.
Keyword:
MAGNETIC CIRCULAR-DICHROISM
EFFECTIVE-FIELD
DOMAIN-WALLS
DRIVEN
SPINTRONICS
LAYER
TEMPERATURE
TRANSITION
DEPENDENCE
NANOWIRES
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分享收藏Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields在没有外部磁场的情况下，通过自旋轨道扭矩切换垂直磁化NATURE NANOTECHNOLOGY
NATURE NANOTECHNOLOGYIF34.9
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