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Stacked Class-E Amplifier
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DOI：10.1109/TIE.2019.2946546.png)
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摘要
En 中文
In this article, a novel class-E amplifier topology, based on the functioning principle of the stacked converters, is presented. In this amplifier the available output electric power is determined by the addition of the electric power generated by each of the associated devices. Herein, two MOSFETs connected in series are linked, on the one hand, to a dc voltage source and, on the other hand, to a resonant $LC$ circuit and a resistance charge connected in parallel to the capacitor. Both MOSFETs are driven by a gate-to-source square signal allowing a synchronized commutation, promoting a quasi-resonant amplifier behavior similar to that of the classical class-E amplifier; with the characteristic of being able to manage the double of applied dc voltage amplitude and to supply twice electric power to the same load in comparison with the class-E amplifier. This device is able to distribute the same electric power between both MOSFETs, reducing at almost half the magnitude of applied drain-to-source voltage. As a result, voltage stress of each power switch is reduced in comparison with the typical class-E amplifier. Drain efficiency (DE), power added efficiency, and gain of the proposed device were obtained in function of the applied dc voltage.
Keyword:
Class-E amplifier
RF amplifier
stacked converter
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期刊
IF:
7.2
论文数:
1.8W
被引数:
9.8W
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