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Stacking-induced Chern insulator
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DOI：10.1103/PhysRevB.107.045117.png)
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Graphene can be turned into a semimetal with broken time-reversal symmetry by adding a valley-dependent pseudoscalar potential that shifts the Dirac point energies in opposite directions, as in the modified Haldane model. We consider a bilayer obtained by stacking two time-reversed copies of the modified Haldane model, where conduction and valence bands cross to give rise to a nodal line in each valley. In the AB stacking, the interlayer hopping lifts the degeneracy of the nodal lines and induces a band repulsion, leading surprisingly to a chiral insulator with a Chern number C = +/- 2. As a consequence, a pair of chiral edge states appears at the boundaries of a ribbon bilayer geometry. In contrast, the AA stacking does not show nontrivial topological phases. We discuss possible experimental implementations of our results.
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REALIZATION
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IF:
3.7
论文数:
15.4W
被引数:
41.0W
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引用论文
Unconventional sequence of correlated Chern insulators in magic-angle twisted bilayer graphene魔角扭曲双层石墨烯中相关Chern绝缘子的非常规序列.png)
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