Study on Interdiffusion at the Interface between HZO and IGZO layers

Hye-Joo Kang

doi:10.1016/j.surfin.2026.108737

2026-02-10

PRE

Hye-Joo Kang

Seung-Wook Ryu

Il‐Kwon Oh *

DOI：10.1016/j.surfin.2026.108737

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摘要

En 中文

• 高温退火在HZO/IGZO界面引发强烈的互扩散。 • 一层超薄Al₂O₃层有效抑制了HZO–IGZO元素互混。 • 互扩散会劣化铁电性能和IGZO沟道稳定性。 • Al₂O₃中间层保持界面完整性并提高Fe-FET可靠性。 • 结果为无盖帽DRAM的界面工程Fe-FET提供了指导原则。

Keyword:

HZO

IGZO

interdiffusion

Al₂O₃

ferroelectric FET

期刊

Surfaces and Interfaces

IF:

6.3

论文数:

10.0K

被引数:

2.4W

机构

sk hynix inc

学者数:

论文数: 3

被引数: 0

ajou university

学者数:

732

论文数: 318

被引数: 0

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