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Supercapacitively Liquid-Solid Dual-State Optoelectronics

delete2024-09-09
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PRE
AI
Q
Qianying Guo
D
Daizong Ji
Q
Qiankun Wang
L
Lan Peng
张聪 (Cong Zhang)
Y
Yungen Wu
D
Derong Kong
S
Shi Luo
W
Wentao Liu
G
Gang Chen
W
Wei, DP
刘云圻 (Yunqi Liu)
魏大程 (Dacheng Wei) *
DOI:10.1002/adma.202406345delete
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摘要

摘要

En 中文
Photo-transduction of solid-state optoelectronics occurs in semiconductors or their interfaces. Considering the confined active area and interfacial capacitance of solid-state materials, solid-state optoelectronics faces inherent limitations in photo-transduction, especially for bionic vision, and the performance is lower than that of living systems. For example, a photoreceptor generates pA-level photocurrent when absorbing a single photon. Here, a liquid-solid dual-state phototransistor is demonstrated, in which photo-transduction and modulation take place at the microporous interface between semiconductors and water, mimicking principles of the photoreceptor. When operating in the water, an orderly stacked photo-harvesting covalent organic framework layer generates supercapacitively photogating modulation of the channel conductivity via a dual-state interface, achieving responsivity of 4.6 x 1010 A W-1 and detectivity of 1.62 x 1016 Jones at room temperature, several orders of magnitude higher than other photodetectors. Such bio-inspired dual-state optoelectronics enables high-contrast scotopic neuromorphic imaging with responsivity greater than photoreceptors, holding promise for constructing optoelectronic systems with performance beyond conventional solid-state optoelectronics. A supercapacitively dual-state phototransistor is developed with microporous liquid-solid interface. A supercapacitively photogating effect greatly enhances responsivity up to 4.6 x 1010 A W-1, and realizes high-contrast scotopic neuromorphic imaging, holding promise for constructing optoelectronic systems with performance beyond conventional solid-state optoelectronics. image
Keyword:
microporous dual-state interface
optoelectronics
phototransistor
scotopic neuromorphic imaging
supercapacitively photogating modulation

期刊

Advanced Materials 封面图
Advanced Materials
IF:
26.8
论文数:
3.4W
被引数:
46.0W

机构

F
fudan university
学者数:
11.8W
论文数: 7.7W
被引数: 121
S
shanghai institute of technical physics, cas
学者数:
1.0K
论文数: 714
被引数: 2
C
chinese academy of sciences
学者数:
56.7W
论文数: 44.9W
被引数: 704
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