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Surface plasmon waveguide Schottky detector
DOI:10.1364/OE.18.008505.png)
摘要
En 中文
A surface plasmon polariton detector is demonstrated at infra-red wavelengths. The device consists of a metal stripe on silicon forming a Schottky contact thereon and supporting surface a plasmon polariton mode that is strongly confined and localised to the metal-semiconductor interface. Detection of optical radiation below the bandgap of silicon (at infrared wavelengths) occurs through internal photoemission. Responsivities of 0.38 and 1.04 mA/W were measured via end-fire coupling to a tapered optical fibre, at room temperature and at a wavelength of 1280 nm, for gold and aluminium stripes on n-type silicon, respectively. The device can be integrated with other structures used in nano-plasmonics, nano-photonics or silicon-based photonics, and it holds promise for short-reach optical interconnects and power monitoring applications. (C) 2010 Optical Society of America
Keyword:
HIGH SERIES RESISTANCE
INTERNAL PHOTOEMISSION
METAL STRIPES
BOUND MODES
DIODES
PROPAGATION
BARRIER
SILICON
OPTICS
期刊
IF:
3.3
论文数:
6.1W
被引数:
14.3W
机构
引用论文
Surface-plasmon Schottky contact detector based on a symmetric metal stripe in silicon
OPTICS LETTERS
IF3.3
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IF3.7
Bend- and splitting loss of dielectric-loaded surface plasmon-polariton waveguides
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