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Test Methodologies and Test-Time Compression for Emerging Non-Volatile Memory

delete2020-12-01
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Mohammad Nasim Imtiaz Khan *
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Swaroop Ghosh
DOI:10.1109/TR.2019.2919466delete
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摘要

摘要

En 中文
Emerging nonvolatile memories (NVMs) are considered as suitable candidates to replace conventional memories such as static RAM (SRAM) and dynamic RAM (DRAM) due to high density, high performance, and low (static) power operation. However, NVMs bring new fault issues and call for new tests. For example, NVMs exhibit wide read and write latency distribution, incur high write current (leads to high supply noise), are susceptible to external magnetic/thermal field, show high and stochastic retention time, and are prone to endurance and reliability failures. The conventional tests either cannot capture the faults specific to emerging NVMs or they incur significant test time if implemented on emerging NVMs. In this article, we summarize fault models specific to NVMs and explain the related test issues and challenges. We also propose new tests along with necessary design-for-test techniques to characterize the failures. We further summarize NVM tests proposed in prior works and analyze their test time requirements.
Keyword:
Nonvolatile memory
Random access memory
Clocks
Resistance
Magnetic tunneling
Discrete Fourier transforms
Reliability
Endurance
reliability test
magnetic tolerance test
NVM tests
read
write latency test
retention test
supply noise test
test time analysis
thermal tolerance test
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IEEE Transactions on Reliability 封面图
IEEE Transactions on Reliability
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论文数:
2.8K
被引数:
8.5K

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pennsylvania commonwealth system of higher education (pcshe)
学者数:
12.9W
论文数: 11.7W
被引数: 177
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