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The impact of ‘nitrogen incorporation’ on the magnetic anisotropy of CoFeB/MgO multilayer film systems
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DOI：10.1088/1361-6463/ae6125.png)
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Abstract
En 中文
Ferromagnetic/oxide materials with perpendicular magnetic anisotropy (PMA) are widely used in information storage and sensors. Magnetic anisotropy, being one of key performance characteristics of these systems, is governed by ferromagnetic/oxide interface behavior of oxygen (such as oxygen transfer and charge transfer, etc). Ta/Ta(N)/CoFeB/MgO/Ta and Ta(N)/ Ta/CoFeB/MgO/Ta thin films were designed to study the effect of nitrogen incorporation on the magnetic anisotropy of Ta/CoFeB/MgO/Ta systems. After annealing at 300 °C, Ta in the bottom layer of Ta(N)/Ta/CoFeB/MgO/Ta samples has a certain degree of diffusion. But, Fe–O bonding at the CoFeB/MgO interface is not seriously damaged, so the sample still possess PMA. In Ta/Ta(N)/CoFeB/MgO/Ta samples, the bottom layer of Ta and N atoms simultaneously diffuse to the CoFeB/MgO interface, accompanied by the formation of Ta nitride, which destroys the orbital coupling between Fe 3d and O 2p and reduces the magnetic anisotropy of the interface, so the sample presents in-plane magnetic anisotropy. In this paper, a preliminary exploration is made on the nitrogen system at the bottom of Ta, which provides suggestions on process preparation for subsequent experimental work.
Keywords:
Perpendicular magnetic anisotropy
Nitrogen incorporation
CoFeB/MgO multilayer
Magnetic anisotropy
Interface engineering
Journal
J
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3.2
Papers:
726
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0
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