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The influence of ion energy distribution in plasma-enhanced chemical vapor deposition on the sp3/sp2 ratio of diamond-like carbon
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DOI：10.1088/1361-6463/ae5e84.png)
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Abstract
En 中文
Due to the outstanding thermal and electrical properties of diamond-like carbon (DLC), a strategy for fabricating high thermal conductivity epoxy composites through surface modification of filler particles via DLC deposition has been developed. However, a key challenge remains: the ion energy in the plasma-enhanced chemical vapor deposition used for particle modification exhibits a broad distribution, and the synergistic effects of ions with different energies on the sp3/sp2 ratio of DLC are still not well understood. In this study, the ion energy distributions under various voltage conditions were experimentally measured, and the evolution of the sp3/sp2 ratio in DLC films deposited on alumina particles was systematically characterised. The results indicate that the the sp3/sp2 ratio of DLC arises from the collective contribution of ions across multiple energy levels, though their individual influences vary significantly. Notably, ions within the 100 ∼ 200 eV energy range exhibit the greatest positive impact on enhancing the sp3/sp2 ratio. By integrating molecular dynamics simulations to capture the dynamic behavior of ions during the deposition process, a novel evaluation approach was proposed—assessing the influence of ion energy distribution on the sp3/sp2 ratio through the number density of ‘extra atoms’ introduced into the DLC network by ion implantation. This method enables direct prediction of the sp3/sp2 ratio trend based solely on ion energy distribution characteristics, offering a rational and efficient pathway for optimizing deposition parameters. It holds significant practical value for advancing the scalability and controllability of plasma-based surface modification technologies.
Keywords:
diamond-like carbon
sp3/sp2 ratio
ion energy distribution
plasma-enhanced chemical vapor deposition
surface modification
Journal
J
IF:
3.2
Papers:
726
Citations:
0
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