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摘要
En 中文
Abstract
Since the beginning of research on two-dimensional (2D) materials, a few numbers of 2D ferroelectric materials have been predicted or experimentally confirmed, but 2D ferroelectrics as necessary functional materials are greatly important in developing future electronic devices. Recent breakthroughs in 2D ferroelectric materials are impressive, and the physical and structural properties of twisted 2D ferroelectrics, a new type of ferroelectric structure by rotating alternating monolayers to form an angle with each other, have attracted widespread interest and discussion. Here, we review the latest research on twisted 2D ferroelectrics, including Bernal-stacked bilayer graphene/BN, bilayer boron nitride, and transition metal dichalcogenides. Finally, we prospect the development of twisted 2D ferroelectrics and discuss the challenges and future of 2D ferroelectric materials.
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