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Three-beam interference lithography: upgrading a Lloyd's interferometer for single-exposure hexagonal patterning

delete2009-06-03
delete99
PRE
AI
J
Johannes de Boor *
N
Nadine Geyer
G
Goesele, Ulrich
V
Volker Schmidt
DOI:10.1364/OL.34.001783delete
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摘要

摘要

En 中文
Three-beam interference lithography is used to create hole/dot photoresist patterns with hexagonal symmetry. This is achieved by modifying a standard two-beam Lloyd's mirror interferometer into a three-beam interferometer, with the position of the mirrors chosen to guarantee 120 degrees symmetry of exposure. Compared to commonly used three-beam setups, this brings the advantage of simplified alignment, as the position of the mirrors with respect to the substrate is fixed. Pattern periodicities from several wavelengths lambda down to 2/3 lambda are thus easily and continuously accessible by simply rotating the three-beam interferometer. Furthermore, in contrast to standard Lloyd's interferometers, only a single exposure is needed to create hole/dot photoresist patterns. (C) 2009 Optical Society of America
Keyword:
FABRICATION
NANOSTRUCTURES
SILICON
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期刊

Optics Letters 封面图
Optics Letters
IF:
3.3
论文数:
4.0W
被引数:
7.6W

机构

M
Max Planck Society
学者数:
8.2W
论文数: 7.7W
被引数: 3.3W
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