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THz MEMS Switch Design

delete2022-05-08
delete7
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OA
AI
Y
Yukang Feng
H
Han-Yu Tsao
N
N. Scott Barker *
DOI:10.3390/mi13050745delete
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摘要

摘要

En 中文
In this work, an mm-wave/THz MEMS switch design process is presented. The challenges and solutions associated with the switch electrical design, modeling, fabrication, and test are explored and discussed. To investigate the feasibility of this design process, the switches are designed on both silicon and fused quartz substrate and then tested in the 140-750 GHz frequency range. The measurement fits design expectations and simulation well. At 750 GHz the measurement results from switches on both substrates have an ON state insertion loss of less than 3 dB and an OFF state isolation larger than 12 dB.
Keyword:
millimeter-wave
terahertz
MEMS
switch
transmission line model
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Micromachines
IF:
3
论文数:
1.4W
被引数:
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机构

U
University of Virginia
学者数:
3.0W
论文数: 2.7W
被引数: 4.1W
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