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Time-Resolved Dynamics of Semiconductor Nanolaser via Four-Wave Mixing Gating

delete2026-06-09
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OA
AI
F
Federico Monti
G
Guilhem Madiot *
G
Giuseppe Modica
G
Grégoire Beaudoin
K
Konstantinos Pantzas
I
Isabelle Sagnes
A
Alejandro M. Yacomotti
F
Fabrice Raineri
DOI:10.1021/acsphotonics.6c00195delete
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Abstract

Abstract

En 中文
We experimentally demonstrate the direct time-domain characterization of photonic-crystal nanolasers at telecom wavelengths using a nonlinear optical gating technique based on four-wave mixing. This approach enables the temporal characterization of the ultrafast emission dynamics under short-pulse excitation with a picosecond time resolution. When a weak continuous-wave component is added to the pulsed pump, the emission becomes less sensitive to spontaneous-emission noise, resulting in a significantly reduced buildup time. The difference between purely pulsed and hybrid excitation regimes points to the influence of pulse-to-pulse timing fluctuations. To elucidate this effect, we perform Langevin-based simulations that reproduce the experimentally observed broadening and confirm that time jitter, originating from spontaneous emission noise near threshold, dominates the temporal dispersion. These results establish four-wave mixing gating as a powerful method to probe nanolaser dynamics with picosecond precision.
Keywords:
Crystals
Lasers
Photonics
Power
nanolasers
four-wave-mixing
ultrafast-dynamics
semiconductor-lasers
photonics-crystal

Journal

ACS Photonics cover
ACS Photonics
IF:
6.7
Papers:
5.6K
Citations:
2.5W

Organization

U
Universite Cote d'Azur and CNRS
Scholars:
14
Papers: 7
Citations: 0
U
Université Paris-Saclay and CNRS
Scholars:
68
Papers: 32
Citations: 0
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