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TPA-TCT analysis of the RD50-MPW4 monolithic pixel particle detector

delete2026-08-06
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OA
AI
F
F.R. Palomo *
J
Jorge Jiménez‐Sánchez
M
Moritz Wiehe
J
Jory Sonneveld
B
Bernhard Pilsl
F
F. Muñoz
R
Raimon Casanova
C
Christian Irmler
P
P. Sieberer
C
C. Zhang
S
Sinuo Zhang
E
E. Vilella Figueras
M
M. Moll
DOI：10.1016/j.measurement.2026.122777delete
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Abstract

Abstract

En 中文
• TPA-TCT technique applied to the characterization of the RD50-MPW4 particle pixel detector. • 3D sensitivity map in an RD50-MPW4 pixel. • Hit detection efficiency measured using a 1550 nm femtosecond pulsed laser. • Active detection volume and depletion depth determined in a pixel. • Charge sharing between neighboring pixels characterized.
Keywords:
Two Photon Absorption (TPA)
Transient Current Technique (TCT)
Pulsed femtosecond laser
Monolithic pixel particle detectors
Depleted Monolithic Active Pixel Sensor (DMAPS)
High-voltage CMOS (HV-CMOS)
RD50-MPW4 chip

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