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Tunnel junctions in a III-V nanowire by surface engineering
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DOI：10.1007/s12274-014-0579-8.png)
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Abstract
En 中文
We demonstrate a simple way of fabricating high performance tunnel devices from p-doped InAs nanowires by tailoring the n-doped surface accumulation layer inherent to InAs surfaces. By using appropriate ammonium sulfide based surface passivation before metallization without any further thermal treatment, we demonstrate characteristics of tunnel p-n junctions, namely Esaki and backward diodes, with figures of merit better than previously published for InAs homojunctions. The further optimization of both the surface doping, in a quantitative way, and the device geometry allows us to demonstrate that these nanowire-based technologically-simple diodes have promising direct current characteristics for integrated high frequency detection or generation.
Keywords:
semiconductor nanowire
tunnel junction
indium arsenide compounds
doping
III-V semiconductors
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