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Ultraviolet-selective avalanche photodiode
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DOI：10.1016/S0924-4247(99)00326-X.png)
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An ultraviolet (UV)-selective avalanche photodiode is presented. This device has maximum responsivity at the wavelength of 380 nm. A ratio of the responsivities at 380 nm and 1 mu m larger than 80 is achieved. This selectivity results from the combined effect of a potential barrier for holes and of a wavelength-dependent photomultiplication gain. In the avalanche mode, it shows a homogenous gain of 50 in the UV and 20 in the visible (VIS)/near-infrared (NIR) ranges. To our knowledge, this is the first observation of an increase of the photomultiplication gain in the UV region. A measured excess noise factor F of 2.8 (at M-ph = 20) maintains a detectivity limit comparable to that of conventional avalanche photodiodes. Both low-noise avalanche operation and increased UV selectivity can now be achieved simultaneously. (C) 2000 Elsevier Science S.A. All rights reserved.
Keyword:
UV-selective photodetector
avalanche photodiode
photomultiplication gain
silicon
ultraviolet
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4.9
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1.5W
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3.3W
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