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Up-Conversion Device Based on Quantum Dots With High-Conversion Efficiency Over 6%

delete2020-01-01
delete15
delete
OA
AI
唐
唐浩东 (Haodong Tang)
K
Kanming Shi
N
Nan Zhang
Z
Zuoliang Wen
X
Xiangtian Xiao
徐
徐冰 (Bing Xu)
H
Haider Butt
Z
Zoe Pikramenou
王锴 封面图
王锴 (Kai Wang)
X
Xiao Wei Sun *
DOI:10.1109/ACCESS.2020.2987043delete
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摘要

摘要

En 中文
Near infrared to visible up-conversion devices have every growing demand in a myriad of industrial sectors including photovoltaics, energy harvesting, medicine and imaging. Here we have demonstrated an up-conversion device which utilizes quantum dots for both infrared absorption and visible emission. The band structure of the device is designed and optimized with well-constructed carrier transport and blocking layers. The achieved up-conversion device exhibits an impressive conversion efficiency of over 6%, with a high near infrared on-off ratio of over 10(4). The device demonstrates a potential new approach for an up-conversion device designed solely on quantum dots with high efficiency.
Keyword:
II-VI semiconductor materials
Density measurement
Power system measurements
Charge carrier processes
Lighting
Cadmium compounds
Zinc oxide
NIR-visible up-conversion device
quantum dots
solution-processed

期刊

IEEE Access 封面图
IEEE Access
IF:
3.6
论文数:
9.8W
被引数:
29.4W

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