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Utilizing Integrated GaN Half Bridges for an Integrated Single-Stage Current-Source Inverter Motor Drive
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DOI：10.1109/jestpe.2026.3692437.png)
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Abstract
En 中文
Current-source inverters (CSIs) remain an attractive alternative to voltage-source inverters (VSIs) because they can provide inherent voltage boosting for high-speed operation, deliver low-distortion current waveforms, and mitigate motor-side electromagnetic interference (EMI). The rapid adoption of GaN and SiC devices further strengthens this value proposition, yet the sub-nH gate-loop inductance demanded by GaN switches can only be satisfied by half-bridge modules with integrated gate drivers. Their deployment in CSI topologies has, however, been constrained by shoot-through susceptibility under conventional modulation. This article introduces a single-stage CSI motor drive that leverages an integrated GaN half-bridge module and a tailored near-state PWM strategy that removes zero-state vectors. The resulting modulation prevents shoot-through events, thereby enabling the use of integrated half-bridge drivers with CSIs, while simultaneously reducing the DC-link inductance requirement, common-mode voltage (CMV), and switching losses. Although the attainable modulation index is currently confined to the range <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2/3$ </tex-math></inline-formula>–1, practical extensions are discussed with reference to near-state VSI implementations. Analytical insights are substantiated through experimental validation on a 100-W, 100-kr/min prototype drive, built with GaN half-bridge modules featuring integrated gate drivers.
Keywords:
Current-source inverter (CSI)
GaN half bridge
near-state PWM
permanent-magnet synchronous motor (PMSM) drives
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