Vacuum microelectronic diode using bonding technology

doi:10.1016/S0924-4247(97)80070-2

Vacuum microelectronic diode using bonding technology

1996-07-01

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DOI：10.1016/S0924-4247(97)80070-2

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This paper describes the operation characteristics and the design of the structure parameter of the vacuum microelectronic diode. The silicon tip array is fabricated using anisotropic wet chemical etching and oxidation-sharpened technology. Its substrate is a 1-1.5 Omega cm n-type [100] silicon wafer. The vacuum microelectronic diode is obtained by using silicon-oxide bonding techniques. In the paper, the measurement results are also given. The turn-on voltage of the diode is about 5-6 V and the reverse breakdown voltage is about 70 V. The emission current of a single tip is 0.05 mu A.

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bonding technology

microelectronics

vacuum diodes

Vacuum microelectronic diode using bonding technology

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