Valleytronics in 2D materials

doi:10.1038/natrevmats.2016.55

2016-08-23

2.1K

PRE

DOI：10.1038/natrevmats.2016.55

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摘要

En 中文

Semiconductor technology is currently based on the manipulation of electronic charge; however, electrons have additional degrees of freedom, such as spin and valley, that can be used to encode and process information. Over the past several decades, there has been significant progress in manipulating electron spin for semiconductor spintronic devices, motivated by potential spin-based information processing and storage applications. However, experimental progress towards manipulating the valley degree of freedom for potential valleytronic devices has been limited until very recently. We review the latest advances in valleytronics, which have largely been enabled by the isolation of 2D materials (such as graphene and semiconducting transition metal dichalcogenides) that host an easily accessible electronic valley degree of freedom, allowing for dynamic control.

Keyword:

GIANT BANDGAP RENORMALIZATION

EXCITON BINDING-ENERGY

LIGHT-EMITTING-DIODES

SINGLE-LAYER MOS2

MOLYBDENUM-DISULFIDE

MONOLAYER MOS2

VALLEY POLARIZATION

QUANTUM EMITTERS

CHARGE-TRANSFER

DIRAC FERMIONS

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期刊

Nature Reviews Materials

IF:

86.2

论文数:

1.2K

被引数:

4.3W

机构

University of Hong Kong

学者数:

4.1W

论文数: 3.9W

被引数: 10.1W

University of Washington

学者数:

8.0W

论文数: 7.0W

被引数: 12.5W

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