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Van der Waals devices for surface-sensitive experiments

delete2025-08-14
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OA
AI
N
Nicolai Taufertshöfer
C
Corinna Burri
R
Rok Venturini
I
Iason Giannopoulos
S
Sandy Adhitia Ekahana
E
Enrico Della Valle
A
Anže Mraz
Y
Yevhenii Vaskivskyi
J
J. Lipič
A
Alexei Barinov
D
Dimitrios Kazazis
Y
Yasin Ekinci
D
D. Mihailović
S
Simon Gerber
DOI：10.1039/D5NR02125Adelete
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摘要

摘要

En 中文
原位表征范德瓦尔斯（vdW）器件采用表面敏感方法为相变和关联电子态提供了关键见解。然而，将vdW材料集成到功能器件中同时保持原始表面是结合输运和表面敏感实验的关键挑战。传统光刻技术会引入表面污染，限制了前沿光谱探针的应用。我们提出了一种基于模板光刻的方法用于制备vdW器件，生产微米级电学接触，并在超高真空下进行剥离。该无光刻胶的图形化方法利用阴影掩膜来定义电学接触，并通过金辅助剥离获得厚度低至单层畴的薄片。作为演示，我们制备了基于1T–TaS2薄片的器件，实现了可靠的电脉冲应用和电阻测量接触，以及允许进行角分辨光电子能谱的清洁表面。该方法为在明确定义的器件几何结构中利用表面敏感探针研究vdW系统的电子性质提供了平台。
Keyword:
van der Waals devices
stencil lithography
surface-sensitive characterization
angle-resolved photoemission spectroscopy
1T–TaS2

期刊

Nanoscale 封面图
Nanoscale
IF:
5.1
论文数:
3.0W
被引数:
11.6W

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