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Versatile memristor for memory and neuromorphic computing

delete2022-01-01
delete60
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OA
AI
T
Tao Guo
K
Kangqiang Pan
Y
Yixuan Jiao
孙柏 封面图
孙柏 (Bai Sun)
杜成 封面图
杜成 (Cheng Du)
J
Joel P. Mills
Z
Zuolong Chen
X
Xiaoye Zhao
L
Lan Wei
Y
Y. Zhou
Y
Yimin A. Wu *
DOI:10.1039/d1nh00481fdelete
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摘要

摘要

En 中文
The memristor is a promising candidate to implement high-density memory and neuromorphic computing. Based on the characteristic retention time, memristors are classified into volatile and non-volatile types. However, a single memristor generally provides a specific function based on electronic performances, which poses roadblocks for further developing novel circuits. Versatile memristors exhibiting both volatile and non-volatile properties can provide multiple functions covering non-volatile memory and neuromorphic computing. In this work, a versatile memristor with volatile/non-volatile bifunctional properties was developed. Non-volatile functionality with a storage window of 4.0 x 10(5) was obtained. Meanwhile, the device can provide threshold volatile functionalities with a storage window of 7.0 x 10(4) and a rectification ratio of 4.0 x 10(4). The leaky integrate-and-fire (LIF) neuron model and artificial synapse based on the device have been studied. Such a versatile memristor enables non-volatile memory, selectors, artificial neurons, and artificial synapses, which will provide advantages regarding circuit simplification, fabrication processes, and manufacturing costs.
Keyword:
CONDUCTIVE FILAMENT
CUINSE2
THRESHOLD
MOBILITY
ARRAYS

期刊

Nanoscale Horizons 封面图
Nanoscale Horizons
IF:
6.6
论文数:
1.3K
被引数:
6.3K

机构

S
Southwest Jiaotong University
学者数:
2.9W
论文数: 2.1W
被引数: 2.3W
U
University of Waterloo
学者数:
2.2W
论文数: 2.3W
被引数: 3.3W
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