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Vertical Nanowire Array-Based Light Emitting Diodes
DOI:10.1007/s12274-008-8017-4.png)
摘要
En 中文
Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.
Keyword:
ZnO nanowire
electroluminescence
LED
waveguiding
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期刊
IF:
9
论文数:
7.4K
被引数:
4.9W

