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Voltage-Mode Ferroelectric Synapse for Neuromorphic Computing
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DOI：10.1021/acsami.3c09506.png)
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Ferroelectric materials with a modulable polarization extent hold promise for exploring voltage-driven neuromorphic hardware, in which direct current flow can be minimized. Utilizing a single active layer of an insulating ferroelectric polymer, we developed a voltage-mode ferroelectric synapse that can continuously and reversibly update its states. The device states are straightforwardly manifested in the form of variable output voltage, enabling large-scale direct cascading of multiple ferroelectric synapses to build a deep physical neural network. Such a neural network based on potential superposition rather than current flow is analogous to the biological counterpart driven by action potentials in the brain. A high accuracy of over 97% for the simulation of handwritten digit recognition is achieved using the voltage-mode neural network. The controlled ferroelectric polarization, revealed by piezoresponse force microscopy, turns out to be responsible for the synaptic weight updates in the ferroelectric synapses. The present work demonstrates an alternative strategy for the design and construction of emerging artificial neural networks.
Keyword:
synaptic devices
neuromorphiccomputing
ferroelectricity
P(VDF-TrFE-CTFE)
piezoresponse forcemicroscopy
期刊
IF:
8.2
论文数:
6.1W
被引数:
38.7W
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