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Wafer-Scale Ultrafine Wrinkle Architectures of TMDCs for Multifunctionality
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DOI：10.1002/adma.74593.png)
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Abstract
En 中文
Intensely applied strain from wrinkled architecture mitigates intrinsic limitations of 2D materials while enhancing their capabilities through spatially modulated electronic and catalytic properties. Here, this study introduces a deterministic wafer-scale fabrication strategy that enables densely distributed ultrafine wrinkled architectures in atomically thin molybdenum disulfide (MoS2) crystals, achieving tensile strains up to 3.29% over 50% of the scan area. The wrinkle structures are obtained by modulating the parameters of a wet transfer method, including transfer liquid media, thermal energy, and polystyrene (PS) solution concentrations. Collectively, these results demonstrate a practical route to wafer-scale fabrication of ultrafine wrinkle structures. The wrinkled MoS2 (w-MoS2) exhibits optimal multifunctional device performance in electronics and as a hydrogen evolution catalyst. In a hydrogen evolution reaction (HER), the lowest Tafel slope (52.3 mV dec−1) is observed, comparable to that of metallic TMDC catalysts. Furthermore, our w-MoS2 memory device displays an on/off ratio of 5 × 107 with a large memory window corresponding to 65% of the total gate voltage (VGS) sweep range. This simple and innovative morphology engineering offers a viable and reproducible pathway toward high-performance electronic and catalytic functionalities in highly strained 2D materials.
Keywords:
hydrogen evolution reaction systems
memory devices
transition metal dichalcogenides (TMDCs)
wrinkles
Journal
IF:
26.8
Papers:
3.4W
Citations:
46.0W
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