Waveguide-coupled detector in zero-change complementary metal-oxide-semiconductor

L. Alloatti

doi:10.1063/1.4927393

2015-07-27

L. Alloatti *

Srinivasan Ashwyn Srinivasan

Jason S. Orcutt

Rajeev J. Ram

DOI：10.1063/1.4927393

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摘要

En 中文

We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at -1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB. (C) 2015 AIP Publishing LLC.

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TECHNOLOGY

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期刊

Applied Physics Letters

IF:

3.6

论文数:

10.4W

被引数:

17.8W

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