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Wigner-function formulation in anisotropic semiconductor quantum wells
DOI:10.1103/PhysRevB.64.115304.png)
摘要
En 中文
Wigner transport equation applicable to the quantum transport in anisotropic semiconductor quantum wells is formulated. Especially, we develop a formulation in which we can use the conventional Wigner transport equation solvers developed assuming isotropic semiconductors for the actual numerical calculation. Using this formulation. transport properties of Si/SiGe resonant-tunneling diodes are analyzed, which shows the characteristics of transverse-longitudinal momentum coupling phenomena via the off-diagonal effective mass tensor elements unique in anisotropic materials.
Keyword:
RESONANT-TUNNELING DIODES
VARYING EFFECTIVE-MASS
HETEROSTRUCTURE BOUNDARIES
FUNCTION SIMULATION
FUNCTION MODEL
TRANSPORT
BARRIER
ABSORPTION
ELECTRON
DEVICES
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期刊
IF:
3.7
论文数:
15.4W
被引数:
41.0W
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Comparison of self-consistency iteration options for the Wigner function method of quantum device simulation
PHYSICAL REVIEW B
IF3.7

