.png){kind=icon}
Return
3D Stacking Enabled Non-Volatile Multi-Level Optically/Electrically Writeable/Readable Memory
.png){kind=icon}
PRE
AI
DOI：10.1002/admt.202401428.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
In an era marked by rapid information development and the thriving growth of artificial intelligence, the demand for data communication is not only for faster transmission speeds but also for increased storage and security requirements. In this study, a first attempt of 3D stacking photoelectric memory device composed of quantum dot light-emitting diodes (QLEDs) (ITO/P3HT-COOH/(CdSe/ZnS) QDs/ZnO/Ag), resistive random-access memory (RRAM) (Ag/PMMA/Au), and organic solar cells (OSCs) (Au/ZnO/P3HT:PCBM/MoO3/Ag) is presented. The photoelectric memory device can output both optical and electrical signals by tuning the input electric voltage and/or the intensity of external light sources. When the RRAM is in a high-resistance state, its high resistance prevents the QLED from emitting light. The QLED will only emit light when the RRAM is activated and/or the OSC is exposed to a sufficiently strong external light source. The photoelectric memory exhibits multi-level performance by allowing for the tuning of optical and electrical signal outputs through varying the external voltage and/or the intensity of external light sources which leads to higher storage density and faster transmission speeds. Additionally, it also features a high ON/OFF ratio and enables parallel optical-electrical reading. This innovative technology paves a way for broader prospects in future advanced science and technologies.
Keywords:
3D stacking
data communication
information encryption
OSC
photoelectric memory device
QLED
RRAM
Journal
IF:
6.2
Papers:
5.2K
Citations:
2.4W
Organization
Cited Papers
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges.png)
ADVANCED MATERIALS
ADVANCED MATERIALSIF26.8
PREAI
ShareSaveShareSaveMulti-level flash memory device based on stacked anisotropic ReS2-boron nitride-graphene heterostructuresNANOSCALE
NANOSCALEIF5.1
PREAI
ShareSaveFlexible quantum dot light-emitting diodes for next-generation displaysNPJ FLEXIBLE ELECTRONICS
OAAI
NPJ FLEXIBLE ELECTRONICSIF15.5
OAAIShareSaveShareSaveShareSaveShareSave
View more