.png){kind=icon}
.png){kind=icon}
Return
60Coγ-ray irradiation experiments and electrical modeling of through-silicon vias in three-dimensional integrated circuits
.png){kind=icon}
PRE
AI
B
J
Y
G
Q
W
DOI：10.1007/s41365-026-02013-1.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Three-dimensional (3D) integration using through-silicon vias (TSVs) has emerged as a key technology for extending Moore’s law as transistor scaling approaches its physical limits. However, ensuring the electrical reliability of TSVs in radiation environments remains challenging. This study investigates the impact of the total ionizing dose (TID) irradiation on the transmission performance and parasitic effects of the TSV channel. Three types of test samples of varying sizes and TSV arrangements were fabricated and exposed to $$^{60}\text {Co}$$ $$\gamma$$ -ray irradiation. The S-parameters were measured at different doses. The experimental results indicate that increasing the irradiation dose leads to greater insertion loss, narrower −1 dB bandwidth, higher rate of change in group delay, longer propagation delay, and a reduced peak-to-peak group delay. At 180 krad(Si), the maximum propagation delay increased by 1.58%, the maximum average rate of change in group delay increased by 2.52%, and the maximum peak-to-peak group delay decreased by 32.48% compared to pre-irradiation values. In addition, the TID compresses the frequency response of the $$S_{21}$$ magnitude, shifting the dominant effects toward lower frequencies. The impact of the TID on the electrical parameters and material properties of TSVs was quantified by developing an equivalent circuit topology considering crosstalk effects. Optimization was then performed in an advanced design system using the validated equivalent circuit to extract changes in the parasitic parameters. The optimization results indicate that increasing the irradiation dose leads to higher silicon substrate, crosstalk, and oxide layer capacitances, whereas the silicon substrate and crosstalk conductance decrease. These changes are attributed to TID-induced modifications in the material properties of the TSV channel. Subsequently, polynomial fitting was employed to establish the functional relationships between the material properties and the irradiation dose. Consequently, a dose-dependent electrical model of TSVs was developed. This study provides a guiding strategy for evaluating the electrical behavior of TSVs under irradiation and contributes to the design of irradiation-tolerant 3D integrated circuits for high-reliability applications.
Keywords:
Total ionizing dose
Through-silicon via
S-parameters
Equivalent circuit model
Electrical parameters
Journal
IF:
3.8
Papers:
2.1K
Citations:
3.4K
Organization
Cited Papers