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66% efficiency of 850 nm photovoltaic laser power conversion measured under direct laser illumination for single-junction (Al)GaAs upright-growth heterostructures

delete2026-08-12
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PRE
AI
N
N. А. Kalyuzhnyy *
V
Valery V. Evstropov
A
Aleksandra V. Malevskaya
S
S. А. Mintairov
M
Mikhail A. Mintairov
M
Mariia V. Nakhimovich
R
R. А. Salii
M
Maxim Z. Shvarts
V
Vyacheslav M. Andreev
DOI：10.1016/j.solmat.2026.114633delete
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Abstract

Abstract

En 中文
• Optimized upright growth yields high performance for (Al)GaAs PVLPCs. • Absorber thickness and carrier collection trade-off is a key factor. • 66.1% efficiency at 70 W/cm2 under direct 850 nm laser illumination. • Reduced resistive losses maintain over 60% efficiency up to 200 W/cm2. • The SR measurement approach dictates final PVLPC efficiency values.

Journal

Solar Energy Materials and Solar Cells cover
Solar Energy Materials and Solar Cells
IF:
6.3
Papers:
1.2W
Citations:
3.6W

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