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795 nm Multi-Junction Vertical-Cavity Surface-Emitting Lasers
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DOI：10.1109/jstqe.2026.3710001.png)
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Abstract
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Multi-junction vertical-cavity surface-emitting lasers (MJ VCSEL) are attracting increasing interest for their potential to significantly improve power density and power conversion efficiency through epitaxial design alone. Although most research in this field is focused on wavelengths above 900 nm, nuclear magnetic resonance gyroscopes, optically pumped magnetometers, atomic clocks and gas sensors would also benefit from increased power densities at wavelengths below 800 nm. In this paper, the development of 795 nm VCSELs with two cascaded active regions is presented, guided by comprehensive simulations with experimental validation. Key design aspects for efficient MJ VCSELs are discussed, e.g. the tunnel junction composition, impact of the heterostructure design on carrier leakage and output coupling of the top mirror. Experimental data demonstrate a doubled slope efficiency compared to a reference standard VCSEL and an increase in maximum output power of about 10% under continuous wave operation. This confirms the advantages of multi-junction epitaxial designs and supports the development of high-power single-mode VCSELs at 795 nm needed for future quantum sensing applications.
Keywords:
Vertical-cavity surface-emitting laser
VCSEL
multi-junction
tunnel junction
795 nm
high-power
quantum sensing
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