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A Back-Pattern-Dependency-Free Synaptic String Architecture Using Vertical NAND Flash Memory
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DOI：10.1016/j.nanoen.2026.111982.png)
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Abstract
En 中文
• Serial synaptic string eliminates back-pattern dependency • Deterministic programmed-cell count suppresses retention mismatch • Validated on >100-layer commercial V-NAND flash memory • 1.31%p accuracy gain and 2.08% inference energy vs conventional
Keywords:
Synaptic string
Vertical NAND flash memory
Back-pattern dependency
Programmed-cell count
Retention mismatch
Journal
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17.1
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1.2W
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