A CO2 Plasma Based Room-Temperature Copper Etch Process

Yue Kuo

doi:10.1149/2162-8777/ae46dd

A CO2 Plasma Based Room-Temperature Copper Etch Process

2026-02-01

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DOI：10.1149/2162-8777/ae46dd

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Fine copper lines were fabricated using carbon dioxide, a major greenhouse gas, as an oxygen source in a plasma-based copper etching process operated at room temperature. The copper film was oxidized into a rough and porous oxide film with small Cu2O crystals, accompanied by a noticeable volume expansion. The oxidation mechanism is similar to that observed in O2 plasma oxidation process but at a slower rate due to the limited supply of reactive oxygen elements and surface blocking by CO and CO2 species. These findings suggest the potential use of other oxygen-containing gases for plasma-based copper interconnect fabrication.

Keywords:

etching

etching - plasma

microelectronics - semiconductor processing

A CO2 Plasma Based Room-Temperature Copper Etch Process

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