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A field-effect transistor-based room-temperature quantum current source
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DOI：10.1063/5.0146398.png)
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Abstract
En 中文
This work provides a proof-of-concept demonstration of the room-temperature quantum current source based on a nanoscale metal-oxide-semiconductor-field-effect-transistor (MOSFET). Using a low leakage MOSFET design, the current source achieved 1.000 11 +/- 0.000 22 charges per cycle without any leakage correction scheme. The achieved accuracy is limited by noise in the very low level of measured current and by calibration uncertainty.
Keywords:
ELECTRON
INTERFACE
CHARGE
TRAPS
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