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A field-programmable gate array based on wafer-scale 2D semiconductor
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DOI：10.1093/nsr/nwaf458.png)
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Abstract
En 中文
In recent years, 2D transition-metal dichalcogenides (2D-TMDs) have garnered significant attention owing to their unique electronic properties. Particularly in the application of short-channel field-effect transistors, 2D-TMDs have demonstrated notable superiority compared with silicon. This is primarily attributed to their exceptional low off-state current enabled by their monolayer structure, which is crucial for suppressing short-channel effects. Consequently, 2D-TMDs have been widely recognized as promising candidates for future technology. However, current 2D-TMD-based semiconductor devices are predominantly focused on simple logic circuits, lacking practical validation for large-scale functional circuits. In this work, we present a top-gate 2D field-programmable gate array (FPGA) based on the 2D-TMD material molybdenum disulfide. This circuit marks the first demonstration of an FPGA that was constructed from 2D-TMDs, comprising similar to 4000 field effect transistors (FETs) and programmable. In addition, our circuits demonstrate unique advantages in irradiation resistance. Our work provides a significant impetus for the further development of 2D-TMD technology towards practical applications. Researchers demonstrate the first field-programmable gate array built from wafer-scale 2D molybdenum disulfide semiconductors, containing similar to 4000 transistors and showing high radiation resistance.
Keywords:
2D material
field-programmable gate array
integrated circuit
irradiation resistance
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