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A Flexible UV Photodetector Based on ZnO/SiO2/PEDOTPSS Pin-Junction with Enhanced Wide UV Detection Capability
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DOI：10.1142/S1793292026500943.png)
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Abstract
En 中文
The development of flexible UV photodetectors (PDs) has always been a research hotspot in the field of optoelectronics. However, achieving wide UV spectral coverage while maintaining high responsivity and stability remains a challenge. We propose a novel device structure that integrates an SiO2 film as an intrinsic layer into a ZnO/PEDOT:PSS p-n heterojunction to construct a p-i-n heterojunction flexible PD. This PD is based on flexible polyethylene terephthalate (PET) and is fabricated using magnetron sputtering and spin-coating processes by sequentially depositing each functional film. At a 20V bias, the peak responsivity of ZnO/SiO2/PEDOT:PSS PD at 365nm is 390 times that of pure ZnO PD. The rise time and decay time corresponding to the response speed are 0.072s and 0.080s, respectively. The research results indicate that the spectral response range of the p-i-n PD has been significantly broadened, successfully covering the 250-400nm range, achieving detection from UVC to UVA. The p-i-n heterojunction can effectively broaden the depletion layer and optimize the electric field distribution, thereby achieving wide-spectrum detection and performance enhancement simultaneously. This provides a simple and effective strategy for the development of high-performance, broadband, flexible UV PDs.
Keywords:
Flexible UV photodetectors
p-i-n heterojunction
from UVC to UVA
detection
performance
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