A magnetic field regulated flexible memristor for implantable biomedical application

doi:10.1016/j.ceramint.2025.12.189

A magnetic field regulated flexible memristor for implantable biomedical application

2025-12-12

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DOI：10.1016/j.ceramint.2025.12.189

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Memristor with integrated memory and computing offer a promising solution to overcome the computing bottlenecks of conventional electronics, making it the most promising candidates for next-generation electronic devices. In this work, an implantable flexible memristor with Ag/MoOx/MoO3/Ti structure was fabricated by combining the hydrothermal and radio frequency (RF) sputtering methods, which exhibits stable resistive switching (RS) behavior under different bending radii (BR). In addition, the RS behavior of device can be controlled by introducing the magnetic field (MF). The variation in the resistance of memristor under different BR can be attributed to the increase in tensile stress within the film, which leads to the generation of defect states that affect the conductivity of film. In particular, the difference in the resistance of memristor under different MF intensities is due to the effect of Lorentz force on the movement of electrons/ions within the functional layer under the MF. It can be inferred that the conjoint effect of electric field force and Lorentz force alters the shape of the conductive filaments (CFs). Finally, the unique properties demonstrated by the Ag/MoOx/MoO3/Ti memristor have proven the potential applications in physiological signal monitoring and biomedical fields. Therefore, this study lays a foundation for the development of the next generation of implantable memristor and provides important insights for the application in medicine.

A magnetic field regulated flexible memristor for implantable biomedical application

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