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A micro-mechanical resonator with programmable frequency capability
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DOI：10.1088/0964-1726/21/3/035007.png)
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Abstract
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Photo-thermal actuation has been used to program the resonant frequency of a VO2-coated SiO2 micro-bridge. The SiO2 micro-bridge had nominal length, width, and thickness of 300, 45, and 4.15 mu m, respectively. The thickness of the VO2 coating was 150 nm. The changes in resonant frequency are caused by stress changes on the bimorph structure during the coating's insulator-to-metal-transition. A total of 13 resonant frequency memory states ranging from 215.5 to 222.7 kHz were programmed by laser pulses of increasing energy in steps of 0.7 mu J, focused on the micro-bridge structure. The device was maintained at 60 degrees C during programming experiments, and the memory was reset by driving the temperature outside the hysteresis loop. After programming the device to a particular resonant frequency, the memory state was stored for more than 24 h as long as the sample was maintained at the pre-heating temperature of 60 degrees C.
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DIOXIDE FILMS
SILICON
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