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A Multistep DRIE Process for Complex Terahertz Waveguide Components
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DOI：10.1109/TTHZ.2016.2593793.png)
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Abstract
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Asilicon deep reactive-ion etching (DRIE) process has been developed, using multiple SiO2 masks to enable multidepth waveguide features with +/- 2% tolerance. The unique capability of this process is demonstrated by designing, fabricating, and testing an orthomode transducer working in the 500-600 GHz frequency range. Straight waveguide measurements are also performed to characterize the losses associated with the multistep DRIE process, giving results slightly better than expected for metal-machined waveguides. This process enables the integration of multiple terahertz waveguide components such as mixers, multipliers, quadrature hybrids, and polarization twists onto a single silicon package.
Keywords:
Deep reactive-ion etching (DRIE)
orthomode transducer (OMT)
silicon dioxide (SiO2)
silicon micromachining
submillimeter waves
terahertz (THz)
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