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A parameter extraction algorithm for an IGBT behavioral model

delete2004-11-01
delete24
PRE
AI
W
Wanying Kang *
H
Hyung‐Keun Ahn
M
M.A. El Nokali
DOI：10.1109/TPEL.2004.836635delete
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Abstract

Abstract

En 中文
In this paper, we propose a new extraction algorithm for the parameters of an insulated gate bipolar transistor dynamic behavioral model. The algorithm relies on the availability of experimental data from the manufacturers and uses Matlab optimization toolbox to extract the parameters automatically. The theoretical predictions of the algorithm are compared with both the experimental and the simulation data that use alternative extraction methods and are found to be in excellent agreement.
Keywords:
insulated gate bipolar transistor (IGBT)
Matlab optimization toolbox to extract the parameters
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Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.

Journal

IEEE Transactions on Power Electronics cover
IEEE Transactions on Power Electronics
IF:
6.5
Papers:
1.7W
Citations:
8.3W

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No organization information available