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A programmable ferroelectric single electron transistor
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DOI：10.1063/1.4791601.png)
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Abstract
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We experimentally demonstrate a programmable ferroelectric single electron transistor using direct monolithic integration of a multi-gate III-V (In0.7Ga0.3As) quantum well field effect transistor with a composite ferroelectric (lead zirconium titanate) and high-k (hafnium dioxide) gate stack. A split gate electrode configuration allows electrical tuning of the tunnel barrier profile and reconfigurable programming of the device to operate in both classical and Coulomb blockade mode. The ferroelectric gate stack under the split gate electrode further allows non-volatile operation in both modes. This demonstration is a significant step towards realization of a non-volatile, programmable binary decision diagram logic circuit for ultra low power operation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791601]
Keywords:
FIELD-EFFECT TRANSISTOR
LOGIC
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