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A single-atom quantum memory in silicon
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DOI：10.1088/2058-9565/aa63a4.png)
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Abstract
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Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a 'quantum memory' while idle. The P-31 donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the P-31 nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched Si-28. The fidelity of the memory process is characterised via both state and process tomography. Wereport an overall process fidelity F-p approximate to 81%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.
Keywords:
quantum memory
spin qubits
silicon quantum computing
single-atom devices
single-spin magnetic resonance
phosphorus in silicon
quantum coherence
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