Achieving γ-Phase CsPbI3 by Reducing Underlayer Surface Roughness

doi:10.1002/adom.202401164

Achieving γ-Phase CsPbI3 by Reducing Underlayer Surface Roughness

2024-07-16

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DOI：10.1002/adom.202401164

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Cesium lead iodide (CsPbI3) exhibits great potential in developing photovoltaic cells due to suitable optical bandgap and thermal stability. However, the photoactive gamma-phase normally exists at high-temperatures approximate to 180 degrees C, and it is challenging to obtain gamma-phase CsPbI3 at room temperature. Here, it discovers that gamma-phase CsPbI3 is achievable by reducing the underlayer surface roughness to a certain level. This method is universal as demonstrated on the surface of poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) (PEDOT:PSS), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), polystyrene (PS), and silicon substrates. Moreover, it is found that lower surface roughness resulted in smaller crystallite size in the CsPbI3 film, which is an important reason for achieving gamma-phase because the decrease in crystallite size will increase grain surface energy to suppress tilting of PbI6 octahedra and lattice distortion. This study offers a universal approach to obtain gamma-phase CsPbI3 for the development of high-performance all-inorganic perovskite solar cells and other optoelectronic devices.

Keywords:

all inorganic perovskites

CsPbI3

grain size

phase transformation

roughness

Achieving γ-Phase CsPbI3 by Reducing Underlayer Surface Roughness

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