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Achieving Ultrahigh Energy Storage Density for BaTiO3-Based Ceramics under Moderate Electric Fields via Regulating Dielectric Permittivity

delete2025-05-05
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PRE
AI
Z
Zhihong Luo
M
Mingmei Lin
J
Jing Kong
张彪 (Biao Zhang)
W
Wangxin Li
C
Chen, JY
黄建平 (Jiping Huang)
L
Lei, XY
W
Weiping Gong
刘来君 cover
刘来君 (Laijun Liu)
DOI:10.1021/acsami.5c04646delete
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Abstract

Abstract

En 中文
The development of lead-free relaxor ferroelectric ceramics with high energy storage density has emerged as a critical area, driven by the increasing demand for advanced energy storage capacitors and high-power density devices. Conventional approaches to enhance energy-storage performance in lead-free dielectric ceramics typically rely on achieving ultrahigh breakdown field strength (E-b) or employing complex multicomponent composite strategies. However, the requirement for high electric fields hinders the miniaturization and integration of the devices. Furthermore, despite extensive research on the classic BaTiO3-based system, recoverable energy storage densities exceeding 6 J/cm(3) remain exceedingly rare, especially under moderate electric fields (300 kV/cm < E < 500 kV/cm). In this paper, based on the relationship of energy storage among dielectric permittivity (epsilon(r)) and electric field (W-cal = 12 epsilon(0)epsilon E-r(2)), we constructed a superparaelectric state near room temperature and improved epsilon(r) by introducing centrosymmetric BiScO3 into a high epsilon(r) matrix (Ba0.65Sr0.3Ca0.05Sn0.02Ti0.08O3). Ultimately, this strategy enables the realization of an ultrahigh energy storage density of 6.95 J/cm(3) and a high energy efficiency of 86.17% under moderate electric fields (500 kV/cm). These findings provide a practical and innovative pathway for developing high-performance energy storage capacitors, advancing the potential for lead-free dielectric ceramics in next-generation energy storage technologies.
Keywords:
ceramics capacitors
permittivity
BaTiO3-based
relaxor ferroelectrics
energy storageproperties

Journal

ACS Applied Materials and Interfaces cover
ACS Applied Materials and Interfaces
IF:
8.2
Papers:
6.1W
Citations:
38.7W

Organization

C
City Univ Hong Kong
Scholars:
2.1K
Papers: 1.4K
Citations: 810
G
Guilin Univ Technol
Scholars:
1.1K
Papers: 387
Citations: 90