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Advanced ferroelectric oxide films and heterostructures for unconventional applications

delete2025-01-15
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OA
AI
H
Huang Sisi
C
Cheng Ma
金奎娟 (Kuijuan Jin)
DOI:10.1080/23746149.2024.2438686delete
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Abstract

Abstract

En 中文
Ferroelectrics, known for their reversible spontaneous electric polarization, have garnered significant interest in both fundamental physics and applications, such as non-volatile memories and sensors. To address the scattered nature of contemporary ferroelectric research, we write this review which extensively outlines the developments and recent progress on the most studied ferroelectrics, including lead-based and lead-free ferroelectrics, low-dimensional HfO2-based ones, high-entropy relaxor ones, and multiferroics. The tuning methods for these ferroelectrics, including strain, doping, and constructing interfaces, are also systematically discussed. In addition, we also summarize the applications of ferroelectrics, including ferroelectric diodes and ferroelectric tunnel junctions, synaptic devices, domain-wall-based devices, and photoelectric devices, highlighting their significant potential for advanced electronic and optoelectronic devices. This review gives a comprehensive summary of ferroelectrics and offers insights into future research.
Keywords:
Electric polarization
ferroelectric films
ferroelectric devices
photoelectric applications

Journal

Advances in Physics cover
Advances in Physics
IF:
13.8
Papers:
546
Citations:
6.3K

Organization

A
Argonne Natl Lab
Scholars:
4.3K
Papers: 2.0K
Citations: 173
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