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Ag-Assisted Microstructural Optimization of Nanoparticle-Derived CZTSSe Thin Films
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DOI：10.1111/jace.70965.png)
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Abstract
En 中文
Ag-substituted (AgxCu1−x)2ZnSn(S,Se)4 absorbers were prepared from nanopowder-derived precursor films by pressure-assisted pre-sintering and selenization. This study examines Ag substitution as a processing-active additive in nanoparticle-derived kesterite absorbers, where particle packing, interparticle necking, chalcogen exchange, constrained shrinkage, and fine-grained-layer formation govern the final film quality. Ag incorporation expanded the kesterite-related lattice, shifted the x-ray diffraction peaks to lower angles, and increased the ordering-sensitive I(101)/I(112) ratio from 1.8% to 7.3%. More importantly, Ag accelerated microstructural development during selenization, promoted grain coarsening, improved through-thickness densification, and reduced the fine-grained bottom layer commonly observed in nanoparticle-derived CZTSSe films. The optimum Ag/(Ag + Cu) ratio was 10%, which enhanced grain growth while avoiding the Ag-rich surface segregation observed at 15% Ag. This composition showed the lowest resistivity of 1.42 Ω cm, improved carrier mobility, and a moderate optical band gap of 1.05 eV. The corresponding device efficiency increased from 0.5628% for CZTSSe to 0.7243% for 10% Ag-substituted ACZTSSe, mainly through improved open-circuit voltage and fill factor. These results indicate that moderate Ag substitution can regulate the high-temperature conversion pathway of nanoparticle-derived CZTSSe absorbers, providing a processing-oriented strategy for improving densification, microstructural uniformity, and transport continuity.
Keywords:
Ag substitution
CZTSSe
kesterite
non-vacuum thin films
pressure-assisted selenization
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1.7W
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5.4W
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