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All-Carbon Patterning of HOPG on the Nanometer Scale with non-IPRFullerenes
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DOI：10.1039/D6NR00926C.png)
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Abstract
En 中文
Arrays of amorphous carbon defects were prepared
on the basal plane of highly oriented pyrolytic graphite (HOPG) using
Ga⁺ focused ion beam (FIB) writing. These defects were then used as
pinning sites for non-IPR C₅₈ fullerene cages (with reactive adjacent
pentagon rings) deposited onto the room temperature surface from a
low-energy (<6 eV) mass-selected ion beam. Following deposition;
a brief annealing step at 550 K increased the occupation of the FIB
defects by allowing for pinning of additional C₅₈ cages diffusing
from more weakly binding sites elsewhere on the surface. The overall
pinning efficiency depends on the lattice constant of the FIB defect
array. When the defect spacing approaches the mean gliding length
of mobile C₅₈ cages (reflecting surface parallel velocity dissipation
following hyperthermal impact on the superlubric HOPG) nearly complete
decoration of the FIB defects can be achieved. Upon further heating
to 1100 K; a significant fraction of the pinned C₅₈ can be transformed
into non-volatile polymers of partially fused cages. Alternatively;
heating the C₅₈ island arrays while exposing them to atomic hydrogen
can largely remove the FIB-structured deposits by converting them
into volatile fullerene hydrides. The results demonstrate a tunable;
carbon-on-carbon patterning strategy with potential for nanodevice
fabrication.
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