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All-optical photoacoustic transduction and detection with 2D semiconductors for in situ evaluation of integrated chip buried interfaces
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DOI：10.1039/D6NR00622A.png)
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Abstract
En 中文
Integrated chips with two-dimensional (2D) semiconductors have significantly enhanced chip integration density and functionality; while their performances remain critically limited by interfacial qualities. Benefiting from the excellent properties of 2D semiconductors in light–matter interactions; this study achieves in situ non-destructive characterization of buried interfaces in integrated chips. Employing MoS2 thin films as ultrafast photoacoustic transducers; we experimentally demonstrate their two-fold roles: (1) efficient photoacoustic transducers emitting picosecond acoustic (PA) pulses across functional heterointerfaces; (2) sensitive detectors of picosecond acoustic pulse echoes reflected from buried interfaces. By constructing typical paradigms in a variety of integrated chips; the validity and universality of the method for the measurement of the elastic properties and thickness of buried interfaces in integrated chips are verified. Our results provide a promising solution for the precise characterization of interface properties in integrated chips composed of two-dimensional (2D) semiconductors.
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5.1
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3.0W
Citations:
11.6W
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