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All optically driven memory device for terahertz waves
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DOI：10.1364/OL.384740.png)
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Abstract
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We demonstrate an all optically driven memory device based on vanadium dioxide (VO2) for terahertz (THz) waves. By easily tuning the power of illuminating light, a VO2 memory device is coded in reconfigurable and multi-level states, taking advantage of its hysteretic metal-to-insulator phase transition (MIT). Further, writing with intense femtosecond pulses, the memory effects are performed by non-thermal photo-induced MIT, and resultant 2-bit coding with a write time of 22 mu s is demonstrated, yielding a dramatically improved write rate compared to existing thermally controlled VO2 memory device. The proposed all optically driven VO2-based memory device paves the way for actively manipulating THz waves within robust reconfigurable high-speed memory functionality. (C) 2019 Optical Society of America
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METAL-INSULATOR-TRANSITION
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